Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

被引：54

作者：

Hong, HG

Kim, SS

Kim, DY

Lee, T

Song, JO

Cho, JH

Sone, C

Park, Y

Seong, TY ^{[1
]}

机构：

[1] Korea Univ, Div Mat Sci & Engn, Seoul 136713, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[4] Samsung Adv Inst Technol, Photon Program Team, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 10期

关键词：

D O I：

10.1063/1.2174842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p-type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a TiO2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p-contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional Ni/Au contacts, respectively. (c) 2006 American Institute of Physics.

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页数：3

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