Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts

被引：82

作者：

Pan, SM ^{[1
]}

Tu, RC ^{[1
]}

Fan, YM ^{[1
]}

Yeh, RC ^{[1
]}

Hsu, JT ^{[1
]}

机构：

[1] Ind Technol Res Inst, Optoelect Syst Labs, Hsinchu 310, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 05期

关键词：

GaN; indium-tin-oxide; (ITO); InGaN; light-emitting diodes (LEDs); surface textured;

D O I：

10.1109/LPT.2003.809985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a surface-textured indium-tin-oxide (ITO) transparent Ohmic contact layer on p-GaN to increase the optical output of nitride-based light-emitting diodes (LED) without destroying the p-GaN. The surface-textured ITO layer was prepared by lithography and dry etching, and dimensions of the regular pattern were approximately 3 x 3 mum. The operating voltage of the surface-textured LED was almost the same as that of the typical planar LED since the ITO layer was in Ohmic contact with the p-GaN. The experimental results indicate that the surface-textured ITO layer is suitable for fabricating high-brightness GaN-based light emitting devices.

引用

页码：649 / 651

页数：3

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