Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology

被引：48

作者：

Makihira, K ^{[1
]}

Asano, T ^{[1
]}

机构：

[1] Kyushu Inst Technol, Ctr Microelect Syst, Fukuoka 8208502, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 25期

关键词：

D O I：

10.1063/1.126777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method to enhance crystal nucleation at controlled sites in solid-phase crystallization of amorphous Si is demonstrated. The method uses imprint with Ni-coated Si tips prior to conventional furnace annealing of amorphous Si films deposited on SiO2 substrates. The incubation time for crystallization is found to be greatly reduced at sites imprinted with the tips. This enhanced nucleation can be used to form large crystal grains up to about 7 mu m in diameter at controlled sites. Results obtained from imprint with SiO2-covered Si tips suggest that the enhanced nucleation results not from physical effects of indentation but from a chemical effect of metal transfered from the tip to the film surface. (C) 2000 American Institute of Physics. [S0003-6951(00)05425-5].

引用

页码：3774 / 3776

页数：3

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