Evaluation of 0.3 μm poly-silicon CMOS circuits for intelligent power IC application

被引：6

作者：

Matsudai, T ^{[1
]}

Terauchi, M ^{[1
]}

Yoshimi, M ^{[1
]}

Yasuhara, N ^{[1
]}

Ushiku, Y ^{[1
]}

Nakagawa, A ^{[1
]}

机构：

[1] Toshiba Corp, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

polysilicon; CMOS; power IC; fine device; amorphous silicon; recrystallization; NAND ring; delay time;

D O I：

10.1143/JJAP.37.1103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we report on The fine device performance of a 0.3 mu m gate length polysilicon complementary metaloxide-semiconductor (CMOS). The breakdown voltage of 0.3 mu m n-channel metal-oxide-semiconductor field effect transistor (NMOSFET) devices exceeds 6 V, which is higher than that of NMOSFET devices on separation by implanted oxygen (SIMOX) wafer. The drain current of a 10 mu m channel width device is 540 mu A, which is one-fifth of that of NMOSFET on SIMOX. The leakage current is less than 10(-11) A/mu m, when the gate voltage is below 0 V. The S-factor is 125 mV/dec, and the threshold voltage is 0.4 V. Therefore the ON/OFF current ratio is greater than 10(7). A delay time of 1 ns is achieved in polysilicon NAND rings. Hence, it is ascertained that the polysilicon CMOS is applicable for the fabrication of control and protection circuits on power devices.

引用

页码：1103 / 1106

页数：4

共 4 条

[1] SILICON-ON-INSULATOR APPROACH FOR POWER ICS INTEGRATING VERTICAL DMOS AND POLYCRYSTALLINE-SILICON CMOS THIN-FILM TRANSISTORS [J].

DOLNY, GM ;

IPRI, AC ;

NOSTRAND, GE ;

WHEATLEY, CF ;

WODARCZYK, PJ .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) :516-518

[2] A NEW IMPLANT-THROUGH-CONTACT METHOD FOR FABRICATING HIGH-VOLTAGE TFTS [J].

HUANG, TY ;

LEWIS, AG ;

CHIANG, A ;

WU, IW ;

KOYANAGI, M .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) :347-349

[3] A CONDUCTIVITY MODULATED POLYSILICON THIN-FILM-TRANSISTOR [J].

KUMAR, A ;

SIN, JKO ;

WONG, M ;

POON, VMC .

IEEE ELECTRON DEVICE LETTERS, 1995, 16 (11) :521-523

[4] HIGH-VOLTAGE POLY-SI TFTS WITH MULTICHANNEL STRUCTURE [J].

UNAGAMI, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2363-2367

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