A NEW IMPLANT-THROUGH-CONTACT METHOD FOR FABRICATING HIGH-VOLTAGE TFTS

被引:7
作者
HUANG, TY
LEWIS, AG
CHIANG, A
WU, IW
KOYANAGI, M
机构
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D O I
10.1109/55.739
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:347 / 349
页数:3
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共 5 条
[1]   RELATION BETWEEN OXIDE THICKNESS AND THE BREAKDOWN VOLTAGE OF A PLANAR JUNCTION WITH FIELD RELIEF ELECTRODE [J].
ONEIL, VP ;
ALONAS, PG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1098-1100
[2]   FABRICATION OF HIGH-VOLTAGE POLYSILICON TFTS ON AN INSULATOR [J].
PENNELL, R ;
CATERO, R ;
LOVELIS, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2358-2361
[3]  
RICHMAN P, 1973, MOS FIELD EFFECT TRA, P113
[4]   FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J].
TSANG, PJ ;
OGURA, S ;
WALKER, WW ;
SHEPARD, JF ;
CRITCHLOW, DL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :590-596
[5]   HIGH-VOLTAGE SILICON THIN-FILM TRANSISTOR ON QUARTZ [J].
UNAGAMI, T ;
TSUJIYAMA, B .
ELECTRON DEVICE LETTERS, 1982, 3 (06) :167-168