Site-occupying behavior of boron in compensated p-type 4H-SiC grown by sublimation epitaxy

被引：9

作者：

Kakanakova-Georgieva, A ^{[1
]}

Yakimova, R

Linnarsson, MK

Janzén, E

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Royal Inst Technol, S-16440 Kista, Sweden

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 05期

关键词：

D O I：

10.1063/1.1433931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results from electrical and optical measurements of boron in compensated p-type 4H-SiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitance-voltage, and cathodoluminescence techniques. The boron-related contribution to the net acceptor concentration in the layers as well as the boron-related emission at similar to505 nm are detected for various growth conditions. The effect of the concentrations of the attendant impurities Al and N, concentration ratio of Al to N atoms, and growth rate on the site-occupying behavior of boron in the layers is discussed. (C) 2002 American Institute of Physics.

引用

页码：3471 / 3473

页数：3

共 17 条

[1] Boron centers in 4H-SiC [J].

Aradi, B ;

Gali, A ;

Deák, P ;

Rauls, E ;

Frauenheim, T ;

Son, NT .

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 :455-458

[2]

Baranov PG, 1996, INST PHYS CONF SER, V142, P293

[3] Boron in SiC: Structure and kinetics [J].

Bockstedte, M ;

Mattausch, A ;

Pankratov, O .

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 :447-450

[4] ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC [J].

CLEMEN, LL ;

DEVATY, RP ;

MACMILLAN, MF ;

YOGANATHAN, M ;

CHOYKE, WJ ;

LARKIN, DJ ;

POWELL, JA ;

EDMOND, JA ;

KONG, HS .

APPLIED PHYSICS LETTERS, 1993, 62 (23) :2953-2955

[5] Shallow and deep levels in n-type 4H-SiC [J].

Evwaraye, AO ;

Smith, SR ;

Mitchel, WC .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7726-7730

[6]

FRANK T, 1998, I PHYS C SER, V142, P681

[7] SOME NEW FEATURES OF THE PHOTOLUMINESCENCE OF SIC(6H), SIC(4H), AND SIC(15R) [J].

HABERSTROH, C ;

HELBIG, R ;

STEIN, RA .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) :509-513

[8] Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H-SiC [J].

Itoh, H ;

Troffer, T ;

Peppermuller, C ;

Pensl, G .

APPLIED PHYSICS LETTERS, 1998, 73 (10) :1427-1429

[9]

ITOH H, 1998, I PHYS C SER, V142, P685

[10] INCORPORATION MECHANISM OF N, AL, AND B IMPURITIES IN CHEMICAL-VAPOR-DEPOSITION OF SIC [J].

KIMOTO, T ;

ITOH, A ;

MATSUNAMI, H .

APPLIED PHYSICS LETTERS, 1995, 67 (16) :2385-2387

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