Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon

被引:22
作者
Kimura, Y
Kishi, M
Katoda, T
机构
[1] Univ Tokyo, Fac Engn, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Kochi Univ Technol, Fac Engn, Kochi 7820003, Japan
关键词
D O I
10.1063/1.371042
中图分类号
O59 [应用物理学];
学科分类号
摘要
Effects of stress on solid-phase crystallization of amorphous silicon (a-Si) were studied by laser Raman spectroscopy. Compressive stress was introduced in a-Si with a Si3N4 cap. The speed of crystallization decreased with the increase of the stress while it increased again with an additional cap of SiO2 on a Si3N4 cap. A SiO2 cap introduced tensile stress in an a-Si film and relaxed compressive stress by a Si3N4 cap. The reason why crystallization of a-Si is suppressed is that the stress is elastic and that it does not relax with crystallization. (C) 1999 American Institute of Physics. [S0021-8979(99)07014-0].
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页码:2278 / 2280
页数:3
相关论文
共 8 条
[1]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[2]   Effects of strain on crystallization of amorphous silicon characterized by laser Raman spectroscopy [J].
Kimura, Y ;
Katoda, T .
APPLIED SURFACE SCIENCE, 1997, 117 :790-793
[3]   Stress evaluation of radio-frequency-biased plasma-enhanced chemical vapor deposited silicon nitride films [J].
Maeda, M ;
Ikeda, K .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) :3865-3870
[4]  
MOMIWA M, 1985, APPL PHYS LETT, V47, P113
[5]  
SAKAI A, 1991, JPN J APPL PHYS PT 2, V30, P941
[6]   MEASUREMENT OF YOUNGS MODULUS IN AMORPHOUS SILICON WHISKERS [J].
TATSUMI, Y ;
SHIGI, M ;
HIRATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) :1465-1466
[7]   CRITICAL VOLUME FRACTION OF CRYSTALLINITY FOR CONDUCTIVITY PERCOLATION IN PHOSPHORUS-DOPED SI-F-H ALLOYS [J].
TSU, R ;
GONZALEZHERNANDEZ, J ;
CHAO, SS ;
LEE, SC ;
TANAKA, K .
APPLIED PHYSICS LETTERS, 1982, 40 (06) :534-535
[8]   DEVICE APPLICATION AND STRUCTURE OBSERVATION FOR HEMISPHERICAL-GRAINED SI [J].
WATANABE, H ;
AOTO, N ;
ADACHI, S ;
KIKKAWA, T .
JOURNAL OF APPLIED PHYSICS, 1992, 71 (07) :3538-3543