Characterization of MoSe2 thin film deposited at room temperature from solution phase

被引：39

作者：

Hankare, P. P. ^{[1
]}

Patil, A. A. ^{[1
]}

Chate, P. A. ^{[2
]}

Garadkar, K. M. ^{[1
]}

Sathe, D. J. ^{[3
]}

Manikshete, A. H. ^{[3
]}

Mulla, I. S. ^{[4
]}

机构：

[1] Shivaji Univ, Dept Chem, Solid State Res Lab, Kolhapur 416004, Maharashtra, India

[2] JSM Coll, Dept Chem, Alibag, Maharashtra, India

[3] Walchand Coll, Dept Chem, Solapur, Maharashtra, India

[4] Natl Chem Lab, Pune, Maharashtra, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 311卷 / 01期

关键词：

Crystal morphology; X-ray diffraction; Growth from solution; Polycrystalline deposition; Inorganic compound; Semiconducting materials;

D O I：

10.1016/j.jcrysgro.2008.09.188

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A simple, low-temperature method has been developed to synthesis molybdenum diselenide semiconductor thin films, based on the chemical reaction of conlplexed ammonium molybdate, hydrazine hydrate and sodium Selenosulphate in aqueous alkaline medium. The deposition parameter of the MoSe2 thin film is interpreted in the present investigation. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption and electrical measurements. The deposited film was found to be polycrystalline in hexagonal form. The direct band gap 'E-g' for the film was found to be 1.43eV and electrical conductivity in the order of 10(-2)(Omega cm)(-1) with n-type conduction mechanism. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：15 / 19

页数：5

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