Lateral templating for guided self-organization of sputter morphologies

被引：63

作者：

Cuenat, A

George, HB

Chang, KC

Blakely, JM

Aziz, MJ ^{[1
]}

机构：

[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Cornell Univ, Ctr Mat Sci, Ithaca, NY 14853 USA

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 23期

关键词：

D O I：

10.1002/adma.200500717

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Spontaneously emerging topographic patterns on a Si(100) substrate are guided to develop long-range order (see Figure) by using prefabricated boundaries on the area on which they organize. The density of topological defects, such as dislocations, is minimized when the ratio of the spacing between boundaries to the naturally arising spatial period is near an integer value.

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页码：2845 / +

页数：6

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