Locking characteristics of a side-mode injected semiconductor laser

被引：30

作者：

Hong, Y ^{[1
]}

Shore, KA ^{[1
]}

机构：

[1] Univ Wales, Sch Elect Engn & Comp Syst, Bangor LL57 1UT, Gwynedd, Wales

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1999年 / 35卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

injection locking; relaxation oscillation frequency; semiconductor lasers;

D O I：

10.1109/3.798096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is focused on an experimental study of the injection-locking bandwidth and the relaxation oscillation frequency in a side-mode injection-locked semiconductor laser. It is shown that, for such a laser, the injection-locking bandwidth and the relaxation oscillation frequency are related to the injection power and the wavelength of the target injection mode, At fixed launched injection power, the injection-locking bandwidth and relaxation oscillation frequency can be increased when the injection wavelength is detuned to the short-wavelength side of the free-running wavelength, while the relaxation oscillation frequency decreases when the injection wavelength is set to the long-wavelength side of the free-running wavelength. The results are in good agreement with theoretical predictions.

引用

页码：1713 / 1717

页数：5

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