Channeling implantations of Al+ into 6H silicon carbide

被引：23

作者：

Morvan, E

Godignon, P

Vellvehi, M

Hallén, A

Linnarsson, M

Kuznetsov, AY

机构：

[1] CSIC, Ctr Nacl Microelect, Bellaterra 08193, Spain

[2] Royal Inst Technol, Dept Elect, SE-16440 Kista, Sweden

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期

关键词：

D O I：

10.1063/1.124246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A strong channeling effect of Al+ ions implanted into crystalline SiC has been observed by Monte Carlo simulations and experiments especially designed to demonstrate this phenomenon have been performed. Depth distributions of implanted Al were measured for on- and controlled off-axis Al implantations using secondary ion mass spectrometry (SIMS). Much deeper and wider profiles are obtained for the on-axis implantations as compared to off-axis implants. For higher doses, the experiment also reveals the growth of an intermediate peak slightly deeper than the random peak. The origin of the intermediate peak can be understood by combining SIMS results with Monte Carlo simulations, which motivates the development of advanced simulation tools for the ion implantation process in SiC. (C) 1999 American Institute of Physics. [S0003-6951(99)01426-6].

引用

页码：3990 / 3992

页数：3

共 13 条

[1]

APPELTON BR, 1977, ION BEAM HDB MAT ANA, P488

[2] THIN-FILM DEPOSITION AND MICROELECTRONIC AND OPTOELECTRONIC DEVICE FABRICATION AND CHARACTERIZATION IN MONOCRYSTALLINE ALPHA AND BETA SILICON-CARBIDE [J].

DAVIS, RF ;

KELNER, G ;

SHUR, M ;

PALMOUR, JW ;

EDMOND, JA .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :677-701

[3]

Kimoto T, 1997, PHYS STATUS SOLIDI A, V162, P263, DOI 10.1002/1521-396X(199707)162:1<263::AID-PSSA263>3.0.CO

[4]

2-W

[5] Conductivity control of SiC by in-situ doping and ion implantation [J].

Kimoto, T ;

Itoh, A ;

Inoue, N ;

Takemura, O ;

Yamamoto, T ;

Nakajima, T ;

Matsunami, H .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :675-680

[6] Electronic stopping power for Monte Carlo simulation of ion implantation into SiC [J].

Morvan, E ;

Godignon, P ;

Berberich, S ;

Vellvehi, M ;

Millán, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4) :68-73

[7] Montecarlo simulation of ion implantation into SiC-6H single crystal including channeling effect [J].

Morvan, E ;

Godignon, P ;

Montserrat, J ;

Fernandez, J ;

Flores, D ;

Millan, J ;

Chante, JP .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3) :218-222

[8] HIGH-ENERGY CHANNELING IMPLANTS OF PHOSPHORUS ALONG THE SILICON[100] AND SILICON[110] AXES [J].

RAINERI, V ;

SETOLA, R ;

PRIOLO, F ;

RIMINI, E ;

GALVAGNO, G .

PHYSICAL REVIEW B, 1991, 44 (19) :10568-10577

[9] AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC [J].

RAO, MV ;

GRIFFITHS, P ;

HOLLAND, OW ;

KELNER, G ;

FREITAS, JA ;

SIMONS, DS ;

CHI, PH ;

GHEZZO, M .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (06) :2479-2485

[10] CHANNELING CONTROL FOR LARGE TILT ANGLE IMPLANTATION IN SI-(100) [J].

SIMONTON, RB ;

KAMENITSA, DE ;

RAY, AM ;

PARK, CH ;

KLEIN, KM ;

TASCH, AF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) :39-44

← 1 2 →