Tetragonal distortion of c domains in fatigued Pb(Zr,Ti)O3 thin films determined by x-ray diffraction measurements with highly brilliant synchrotron radiation

被引:13
作者
Kimura, S
Izumi, K
Tatsumi, T
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] NEC Corp Ltd, Silicon Syst Res Labs, Tsukuba, Ibaraki 3058501, Japan
关键词
D O I
10.1063/1.1465132
中图分类号
O59 [应用物理学];
学科分类号
摘要
We performed x-ray diffraction measurements by using highly brilliant synchrotron radiation on only a small region of 250-nm-thick Pb(Zr0.33Ti0.67)O-3 polycrystalline films with gold top electrodes after applying various numbers of switching cycles of the electric field. The films were deposited on Pt/SiO2/Si substrates by low-temperature metalorganic chemical vapor deposition. The plane spacing and integrated intensity of 004 and 400 diffraction patterns were plotted against the number of switching cycles. We found a good correlation between the increase in 004-plane spacing and the decrease in remanent polarization. This correlation indicates that tetragonal distortion of c domains is closely related to the fatigue phenomenon. (C) 2002 American Institute of Physics.
引用
收藏
页码:2365 / 2367
页数:3
相关论文
共 18 条
[1]   Capacitor-on-Metal/Via-stacked-Plug (CMVP) memory cell for 0.25 μm CMOS embedded FeRAM [J].
Amanuma, K ;
Tatsumi, T ;
Maejima, Y ;
Takahashi, S ;
Hada, H ;
Okizaki, H ;
Kunio, T .
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :363-366
[2]   FATIGUE OF FERROELECTRIC PBZRXTIYO3 CAPACITORS WITH RU AND RUOX ELECTRODES [J].
BERNSTEIN, SD ;
WONG, TY ;
KISLER, Y ;
TUSTISON, RW .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (01) :12-13
[3]   Single-crystal Pb(ZrxTi1-x)O-3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties [J].
Foster, CM ;
Bai, GR ;
Csencsits, R ;
Vetrone, J ;
Jammy, R ;
Wills, LA ;
Carr, E ;
Amano, J .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2349-2357
[4]   Texture, structure and domain microstructure of ferroelectric PZT thin films [J].
Hector, J ;
Floquet, N ;
Niepce, C ;
Gaucher, P ;
Ganne, JP .
MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) :285-288
[5]  
HIRAI Y, 2000, SPRING 8 ANN REP 199, P100
[6]  
ITO K, 2000, 2000 INT C SOL STAT, P262
[7]   Removal of 90° domain pinning in (100) Pb(Zr0.15Ti0.85)O3 thin films by pulsed operation [J].
Kohli, M ;
Muralt, P ;
Setter, N .
APPLIED PHYSICS LETTERS, 1998, 72 (24) :3217-3219
[8]   EFFECTS OF CRYSTALLINE QUALITY AND ELECTRODE MATERIAL ON FATIGUE IN PB(ZR, TI)O3 THIN-FILM CAPACITORS [J].
LEE, J ;
JOHNSON, L ;
SAFARI, A ;
RAMESH, R ;
SANDS, T ;
GILCHRIST, H ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1993, 63 (01) :27-29
[9]   Determination of domain structure and abundance of epitaxial Pb(Zr,Ti)O3 thin films grown on MgO(001) by rf magnetron sputtering [J].
Lee, KS ;
Kang, YM ;
Baik, S .
JOURNAL OF MATERIALS RESEARCH, 1999, 14 (01) :132-141
[10]   In situ observation of ferroelectric 90°-domain switching in epitaxial Pb(Zr,Ti)O3 thin films by synchrotron x-ray diffraction [J].
Lee, KS ;
Kim, YK ;
Baik, S ;
Kim, J ;
Jung, IS .
APPLIED PHYSICS LETTERS, 2001, 79 (15) :2444-2446