Resonant coupling between surface vibrations and electronic states in silicon nanocrystals at the strong confinement regime

被引：84

作者：

Sa'ar, A ^{[1
]}

Reichman, Y

Dovrat, M

Krapf, D

Jeduejewski, J

Balberg, I

机构：

[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

[2] Hebrew Univ Jerusalem, Ctr Nanosci & Nanotechnol, IL-91904 Jerusalem, Israel

来源：

NANO LETTERS | 2005年 / 5卷 / 12期

关键词：

D O I：

10.1021/nl051740e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A striking correlation between infrared photoinduced absorption spectra and the photoluminescence from silicon nanocrystals indicates that quantized electronic sublevels of the nanocrystals are resonantly coupled to surface vibrational modes via a polarization field produced by coherent longitudinal polar vibrations. Our experimental results and model support the assumption that the mechanism responsible for the efficient photoluminescence from silicon nanocrystals should be assigned to inhibition of nonradiative channels rather than enhancement of radiative channels.

引用

页码：2443 / 2447

页数：5

共 43 条

[1] Porous silicon: a quantum sponge structure for silicon based optoelectronics [J].

Bisi, O ;

Ossicini, S ;

Pavesi, L .

SURFACE SCIENCE REPORTS, 2000, 38 (1-3) :1-126

[2] Size-dependent oxygen-related electronic states in silicon nanocrystals [J].

Biteen, JS ;

Lewis, NS ;

Atwater, HA ;

Polman, A .

APPLIED PHYSICS LETTERS, 2004, 84 (26) :5389-5391

[3] Observation of photoinduced intersubband transitions in one-dimensional semiconductor quantum wires [J].

Calderon, S ;

Kadar, O ;

Sa'ar, A ;

Rudra, A ;

Martinet, E ;

Leifer, K ;

Kapon, E .

PHYSICAL REVIEW B, 2000, 62 (15) :9935-9938

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5] Emission intermittency in silicon nanocrystals [J].

Cichos, F ;

Martin, J ;

von Borczyskowski, C .

PHYSICAL REVIEW B, 2004, 70 (11) :115314-1

[6] The structural and luminescence properties of porous silicon [J].

Cullis, AG ;

Canham, LT ;

Calcott, PDJ .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965

[7] Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 -: art. no. 085327 [J].

Daldosso, N ;

Luppi, M ;

Ossicini, S ;

Degoli, E ;

Magri, R ;

Dalba, G ;

Fornasini, P ;

Grisenti, R ;

Rocca, F ;

Pavesi, L ;

Boninelli, S ;

Priolo, F ;

Spinella, C ;

Iacona, F .

PHYSICAL REVIEW B, 2003, 68 (08)

[8] Resonant two-photon excitation of silicon nanocrystals [J].

Diener, J ;

Kovalev, DI ;

Polisski, G ;

Koch, F .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3350-3352

[9] The role of radiative and nonradiative relaxation processes in the generation of light from silicon nanocrystals [J].

Dovrat, M ;

Goshen, Y ;

Popov, I ;

Jedrzejewski, J ;

Balberg, I ;

Sa'ar, A .

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 9, 2005, 2 (09) :3440-3444

[10] Radiative versus nonradiative decay processes in silicon nanocrystals probed by time-resolved photoluminescence spectroscopy [J].

Dovrat, M ;

Goshen, Y ;

Jedrzejewski, J ;

Balberg, I ;

Sa'ar, A .

PHYSICAL REVIEW B, 2004, 69 (15) :155311-1

← 1 2 3 4 5 →