Size-dependent oxygen-related electronic states in silicon nanocrystals

被引：85

作者：

Biteen, JS

Lewis, NS

Atwater, HA

Polman, A

机构：

[1] CALTECH, Pasadena, CA 91125 USA

[2] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 26期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1765200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon nanocrystals embedded in SiO2 were isolated with a selective etching procedure, and the isolated nanocrystals' excitonic emission energy was studied during controlled oxidation. Nanocrystals having initial diameters, d(0), of similar to2.9-3.4 nm showed a photoluminescence (PL) blueshift upon oxidatively induced size reduction, as expected from models of quantum confinement. Oxidation of smaller Si nanocrystals (d(0)similar to2.5-2.8 nm) also initially resulted in a PL blueshift, but a redshift in the PL was then observed after growth of similar to0.3 monolayers of native oxide. This decrease in excitonic emission energy during oxidation is consistent with the theoretically predicted formation of an oxygen-related excitonic recombination state. (C) 2004 American Institute of Physics.

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页码：5389 / 5391

页数：3

相关论文

共 16 条

[1] Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation [J].

Brongersma, ML ;

Polman, A ;

Min, KS ;

Boer, E ;

Tambo, T ;

Atwater, HA .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2577-2579

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3]

Chabal YJ, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.161315

[4] Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2 -: art. no. 085327 [J].

Daldosso, N ;

Luppi, M ;

Ossicini, S ;

Degoli, E ;

Magri, R ;

Dalba, G ;

Fornasini, P ;

Grisenti, R ;

Rocca, F ;

Pavesi, L ;

Boninelli, S ;

Priolo, F ;

Spinella, C ;

Iacona, F .

PHYSICAL REVIEW B, 2003, 68 (08)

[5] MICROSTRUCTURE AND OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS - SIZE DEPENDENCE OF ABSORPTION-SPECTRA IN SI NANOMETER-SIZED CRYSTALLITES [J].

KANEMITSU, Y ;

UTO, H ;

MASUMOTO, Y ;

MATSUMOTO, T ;

FUTAGI, T ;

MIMURA, H .

PHYSICAL REVIEW B, 1993, 48 (04) :2827-2830

[6] OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE [J].

LUKES, F .

SURFACE SCIENCE, 1972, 30 (01) :91-&

[7]

Min KS, 1996, APPL PHYS LETT, V68, P2511, DOI 10.1063/1.115838

[8] Observation of laser oscillation in aggregates of ultrasmall silicon nanoparticles [J].

Nayfeh, MH ;

Rao, S ;

Barry, N ;

Therrien, J ;

Belomoin, G ;

Smith, A ;

Chaieb, S .

APPLIED PHYSICS LETTERS, 2002, 80 (01) :121-123

[9] Optical gain in silicon nanocrystals [J].

Pavesi, L ;

Dal Negro, L ;

Mazzoleni, C ;

Franzò, G ;

Priolo, F .

NATURE, 2000, 408 (6811) :440-444

[10] ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SILICON CRYSTALLITES - APPLICATION TO POROUS SILICON [J].

PROOT, JP ;

DELERUE, C ;

ALLAN, G .

APPLIED PHYSICS LETTERS, 1992, 61 (16) :1948-1950