Chemical vapor deposition of an electroplating Cu seed layer using hexafluoroacetylacetonate Cu(1,5-dimethylcyclooctadiene)

被引：15

作者：

Lee, WH

Ko, YK

Byun, IJ

Seo, BS

Lee, JG

Reucroft, PJ

Lee, JU

Lee, JY

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA

[3] Kookmin Univ, Sch Met & Mat Engn, Seoul 136702, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2001年 / 19卷 / 06期

关键词：

D O I：

10.1116/1.1405511

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Metal organic chemical vapor deposition (MOCVD) was used to obtain copper films with low resistivity, high reflectance, and good adhesion in the 500 Å to 700 Å thickness range. The effects of adding a He carrier gas system on the film characteristics were investigated. The deposition rate and the two dimensional layer-by-layer growth mode was enhanced by the addition of the carrier gas system.

引用

页码：2974 / 2978

页数：5

共 25 条

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