Copper(I) tert-butyl 3-oxobutanoate complexes as precursors for chemical vapor deposition of copper

Copper(I) complexes, (btac)CuL, where btac = tert-butyl 3-oxobutanoate and L = trimethylvinylsilane (TMVS), bistrimethylsilylacetylene (BT-MSA), 1,5-cyclooctadiene (COD), 1,5-dimethyl-1,5-cyclooctadiene(DMCOD),2-butyne, 1-trimethylsilyl-1-propyne (TMSP), trimethylphosphine (PMe3), and trimethyl phosphite IP(OMe)(3)], were synthesized. They produce copper metal via a thermally induced disproportionation reaction. (Btac)Cu[P(OMe)(3)] is especially attractive as a CVD precursor since it is a volatile liquid with high thermal stability. High-purity Cu films were deposited on TiN substrates at temperatures as low as 120 degrees C using (btac)Cu[P(OMe)(3)], while no deposition was observed on SiO2, even at 200 degrees C.