Si nanofabrication using AFM field enhanced oxidation and anisotropic wet chemical etching

被引：34

作者：

Morimoto, K

Araki, K

Yamashita, K

Morita, K

Niwa, M

机构：

[1] Semiconductor Research Center, Matsushita Elec. Industrial Co. Ltd., Moriguchi, Osaka 570

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

Si nanofabrication; AFM field enhanced oxide; anisotropic wet etching; SIMOX; Si quantum wire;

D O I：

10.1016/S0169-4332(97)80159-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a novel Si nanofabrication method based on an atomic force microscope (AFM) field-enhanced oxidation and an anisotropic wet chemical etching using SIMOX (separation by implanted oxygen) wafer. A newly developed AFM system enables this fabrication method to be fully compatible with a conventional VLSI process. Using this technique, Si quantum wire with a feature size of 60 nm has been successfully fabricated within the intended area. Moreover, by means of a structural analysis by cross-sectional transmission electron microscopy, it is confirmed that the AFM-field-enhanced oxide film has a similar excellent structure as thermally grown oxide.

引用

页码：652 / 659

页数：8

共 18 条

[1] Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching [J].