Novel fabrication method of Si nanostructures using atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching

被引：5

作者：

Araki, K ^{[1
]}

Morimoto, K ^{[1
]}

Morita, K ^{[1
]}

Niwa, M ^{[1
]}

Hirai, Y ^{[1
]}

机构：

[1] UNIV OSAKA PREFECTURE,COLL ENGN,SAKAI,OSAKA 593,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12B期

关键词：

Si nanostructure; atomic force microscope; anisotropic wet chemical etching; field-enhanced oxidation; quantum functional device; nanofabrication; alignment;

D O I：

10.1143/JJAP.35.6679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated a novel method of fabricating Si nanostructures. Based on a combination of atomic force microscope (AFM) field-enhanced oxidation and anisotropic wet chemical etching, Si nanostructures with a minimum width of 50 nm are successfully obtained within the intended area with precise alignment. Overlay patterning followed by AFM field-enhanced oxidation is carried out with high accuracy. It is confirmed that the field-enhanced oxide line with a thickness of at least about 3 nm can act as an mask against anisotropic wet chemical etching. This method enables the realization of sub-10 nm Si nanostructures.

引用

页码：6679 / 6682

页数：4

共 9 条

[1] MODIFICATION OF HYDROGEN-PASSIVATED SILICON BY A SCANNING TUNNELING MICROSCOPE OPERATING IN AIR [J].