MODIFICATION OF N-SI(100) SURFACE BY SCANNING TUNNELING MICROSCOPE TIP-INDUCED ANODIZATION UNDER NITROGEN ATMOSPHERE

被引：38

作者：

SUGIMURA, H ^{[1
]}

KITAMURA, N ^{[1
]}

MASUHARA, H ^{[1
]}

机构：

[1] ERATO,RES DEV CORP JAPAN,MICROPHOTOCONVERS PROJECT,SAKYO KU,KYOTO,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 1B期

关键词：

SCANNING TUNNELING MICROSCOPY; SURFACE MODIFICATION; SILICON; SILICON OXIDE; ANODIZATION; NANOLITHOGRAPHY;

D O I：

10.1143/JJAP.33.L143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A hydrogen-terminated silicon (Si) surface was modified under nitrogen atmosphere by the use of a scanning tunneling microscope (STM). Nanoscale silicon oxide (SiOx) patterns were fabricated by STM tip-induced oxidation of Si with adsorbed water. Oxide formation was promoted in the sample bias range of +2.0 similar to +10.0 V (tip-induced anodization) 6-28 times as efficiently as that in the bias range of -3.0 similar to -5.0 V (field-enhanced oxidation). The spatial resolution of SiO, patterns was improved by increasing the tip scan rate, and line patterns of similar to 20 nm in width were obtained under the optimized conditions.

引用

页码：L143 / L145

页数：3

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