Growth of ZnS, CdS and multilayer ZnS/CdS thin films by SILAR technique

被引：76

作者：

Valkonen, MP ^{[1
]}

Kanniainen, T ^{[1
]}

Lindroos, S ^{[1
]}

Leskela, M ^{[1
]}

Rauhala, E ^{[1
]}

机构：

[1] UNIV HELSINKI,ACCELERATOR LAB,FIN-00014 HELSINKI,FINLAND

来源：

APPLIED SURFACE SCIENCE | 1997年 / 115卷 / 04期

关键词：

D O I：

10.1016/S0169-4332(97)00008-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Successive ionic laver adsorption and reaction (SILAR) technique was used to deposit cadmium sulfide (CdS) and zinc sulfide (ZnS) thin films on (100)GaAs. CdS thin films were also grown on ITO-covered glass substrates, Multilayer CdS/ZnS thin films were deposited on glass substrates. The crystallinity of the thin films was characterized by means of X-ray diffraction and they all turned out to be polycrystalline. The thin films looked relatively smooth and homogeneous in scanning electron microscopy (SEM) images. Energy dispersive X-ray analysis (EDX) and Rutherford backscattering spectroscopy (RBS) proved nearly 1:1 stoichiometry for the multilayer samples. Thickness of the thin films was measured by RBS and chemical analysis. (C) 1997 Elsevier Science B.V.

引用

页码：386 / 392

页数：7

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