KrF excimer laser induced ablation-planarization of GaN surface

被引：33

作者：

Akane, T

Sugioka, K

Ogino, H

Takai, H

Midorikawa, K

机构：

[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan

[2] Tokyo Denki Univ, Fac Engn, Dept Elect Engn, Tokyo 1018457, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 148卷 / 1-2期

关键词：

GaN; ablation; planerization; KrF excimer laser; X-ray photoelectron spectroscopy (XPS); atomic force microscopy (AFM);

D O I：

10.1016/S0169-4332(99)00156-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface roughness of an as-grown GaN epilayer is reduced using a combination of KrF excimer laser irradiation and post chemical wet treatment. KrF excimer laser irradiation ablates GaN surfaces. resulting in the formation of a Ga-rich layer on the surface. The Ga-rich layer is etched off by hydrochloric acid treatment. X-ray photoelectron spectroscopic (XPS) analysis reveals that the chemically etched surface has similar composition and chemical bonding to those of untreated GaN. The average roughness (R-a) is improved by similar to 43% compared with an untreated GaN sample with a laser fluence of over 2.0 J/cm(2). (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：133 / 136

页数：4

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