Tunable sulfur desorption in exfoliated MoS2 by means of thermal annealing in ultra-high vacuum

被引：135

作者：

Donarelli, M. ^{[1
]}

Bisti, F. ^{[1
]}

Perrozzi, F. ^{[1
]}

Ottaviano, L. ^{[1
,2
]}

机构：

[1] Univ Aquila, Dipartimento Sci Fis & Chim, I-67100 Laquila, Italy

[2] UOS Aquila, CNR SPIN, I-67100 Laquila, Italy

来源：

CHEMICAL PHYSICS LETTERS | 2013年 / 588卷

关键词：

ARGON ION-BOMBARDMENT; LARGE-AREA; ATOMIC LAYERS; BASAL-PLANE; SPECTROSCOPY; GROWTH;

D O I：

10.1016/j.cplett.2013.10.034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effects of thermal annealing in ultra-high vacuum on the electronic structures of bulk and liquid exfoliated MoS2 have been studied by core level and valence band X-ray photoemission spectroscopy. A quantitative analysis of core level spectra demonstrates, in the case of exfoliated MoS2, that, upon annealing above 200 degrees C, defect formation occurs in the form of sulfur single and double vacancies. Sulfur vacancies introduce surface states in the band gap (determined by the analysis of the valence band spectra). This determines a rigid shift of the core levels to lower binding energies, as a consequence of an upward band bending. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：198 / 202

页数：5

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