Optimization of GaMnAs growth in low temperature molecular beam epitaxy

被引:20
作者
Kim, KH
Park, JH
Kim, BD
Kim, CS
Kim, D
Kim, HJ
Ihm, YE
机构
[1] Chungnam Natl Univ, Dept Mat Engn, Yusong Ku, Taejon 305764, South Korea
[2] Korea Res Inst Standards & Sci, Mat Evaluat Ctr, Yusong Ku, Taejon 205600, South Korea
关键词
GaMnAs; low temperature growth; MBE; process optimization;
D O I
10.1007/BF03027015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a detailed growth optimization procedure and experimental results for the growth of GaMnAs magnetic semiconductors in low-temperature molecular beam epitaxy. They were explored by using in-situ monitoring of the surface reconstruction patterns, double crystal/high-resolution x-ray diffaction, conductivity measurement, and superconducting quantum interference device measurements. The results showed strong correlations among the measurements. The room temperature conductivity measurement, in particular, was found to be a useful tool in forecasting the ferromagnetic transition temperature of the films. High quality GaMnAs films could contain Mn up to similar to5% without MnAs segregation at substrate temperatures of 215similar to275degreesC. The highest transition temperature of 80 K, however, was measured from the sample with 3.7% Mn grown at the substrate temperature of 250degreesC and As-4 pressure of 1.4 x 10(-6) torr for a growth rate of 0.25 mum/hr.
引用
收藏
页码:177 / 181
页数:5
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