Grain Orientation Mapping of Polycrystalline Organic Semiconductor Films by Transverse Shear Microscopy

被引：74

作者：

Kalihari, Vivek ^{[1
]}

Tadmor, E. B. ^{[2
]}

Haugstad, Greg ^{[3
]}

Frisbie, C. Daniel ^{[1
]}

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Aerosp Engn & Mech, Minneapolis, MN 55455 USA

[3] Univ Minnesota, Characterizat Facil, Shepherd Labs, Minneapolis, MN 55455 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 21期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1002/adma.200801834

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A scanning probe technique, termed transverse shear microscopy, produces striking images of grain size, shape, and crystallographic orientation in ultrathin layers of polycrystalline organic semiconductors. The key feature of this novel technique is its ability to generate Grain Orientation Maps that facilitate quantitative analysis of grain alignment and the angular distribution of GBs.

引用

页码：4033 / +

页数：8

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