Fabrication of field-effect transistor devices with fullerodendron by solution process

被引：22

作者：

Kusai, H ^{[1
]}

Nagano, T

Imai, K

Kubozono, Y

Sako, Y

Takaguchi, Y

Fujiwara, A

Akima, N

Iwasa, Y

Hino, S

机构：

[1] Okayama Univ, Dept Chem, Okayama 7008530, Japan

[2] JST, CREST, Kawaguchi 3220012, Japan

[3] Okayama Univ, Grad Sch Environm Sci, Okayama 7008530, Japan

[4] JAIST, Ishikawa 9231292, Japan

[5] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[6] Chiba Univ, Fac Engn, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 17期

关键词：

D O I：

10.1063/1.2198098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility mu of the fullerodendron FET reaches 1.7 x 10(-3) cm(2) V-1 s(-1) at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K. (c) 2006 American Institute of Physics.

引用

页数：3

共 25 条

[1] Organic thin-film transistors: A review of recent advances [J].