Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators -: art. no. 143506

A flexible C-60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, mu, is estimated to be similar to 10(-2) cm(2) V-1 s(-1) at 300 K. Furthermore, the C-60 FET has been fabricated with a high-dielectric Ba0.4Sr0.6Ti0.96O3 (BST) gate insulator, showing n-channel properties; the mu value is estimated to be similar to 10(-4) cm(2) V-1 s(-1) at 300 K. The FET device operates at very low gate voltage, V-G, and low drain-source voltage, V-DS. Thus these C-60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively. (C) 2005 American Institute of Physics.