Thermal interface material with aligned CNT and its application in HB-LED packaging

被引:29
作者
Zhang, K. [1 ]
Yuen, Matthew M. F. [1 ]
Wang, N. [1 ]
Miao, J. Y. [1 ]
Xiao, David G. W. [1 ]
Fan, H. B. [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Mech Engn, Clear Water Bay, Kowloon, Hong Kong, Peoples R China
来源
56TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE 2006, VOL 1 AND 2, PROCEEDINGS | 2006年
关键词
D O I
10.1109/ECTC.2006.1645644
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High density, well aligned vertical CNT arrays were synthesized by thermal chemical vapor deposition (CVD) method on 1 inch by 1 inch Si substrates with sputtered Ti and Si layers. They were used as a new kind of thermal interface material (TIM) for the thermal management of microelectronic packages and high brightness light emitting diode (HB-LED) packages. The thermal resistance of the CNT-array-TIM and some other TIM were evaluated and compared according to ASTM D5470 standard. The thermal resistance of CNT-array-TIM was found to be 15 mm(2)center dot K/W which was only 20% of that of the commercial silver epoxy. The mechanism of the phonon heat transfer through the CNT-array-TIM was reviewed. The application performance of CNT-array-TIM in HB-LED packages was predicted by finite element analysis using ANSYS code. It was concluded that CNT arrays synthesized by the simple thermal CVD procedure is a promising low cost and effective TIM.
引用
收藏
页码:177 / +
页数:2
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