Focused ion-beam structuring of Si and Si/CoSi2 heterostructures using adsorbed hydrogen as a resist

被引：11

作者：

Fuhrmann, H ^{[1
]}

Döbeli, M

Mühle, R

Suter, M

机构：

[1] ETH Zurich, Paul Scherrer Inst, IPP, CH-8093 Zurich, Switzerland

[2] ETH Zurich, IPP, CH-8093 Zurich, Switzerland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 03期

关键词：

D O I：

10.1116/1.590674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A focused ion-beam system was used for structuring of silicon by local desorption of hydrogen from the HF-passivated surface. The native oxide which was formed on the depassivated regions was used as an etch mask for KOH. The etch contrast for Ga and Si ions was studied as a function of ion energy and fluence. With a fluence on the order of 10(13) cm(2), a feature height of 15 nm was obtained. The method was applied to produce 160 nm wide CoSi2 wires on a Si/CoSi2 heterostructure. (C) 1999 American Vacuum Society.

引用

页码：945 / 948

页数：4

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