Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study

被引：63

作者：

Cheng, Ran ^{[1
]}

Wang, Wei ^{[1
]}

Gong, Xiao ^{[1
]}

Sun, Linfeng ^{[2
]}

Guo, Pengfei ^{[1
]}

Hu, Hailong ^{[2
]}

Shen, Zexiang ^{[2
]}

Han, Genquan ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

GROUP-IV SEMICONDUCTORS; GE1-XSNX BUFFER LAYERS; GE; SI; FREQUENCIES; PRESSURE; DIAMOND; ALLOYS; GROWTH; LAW;

D O I：

10.1149/2.013304jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the first realization of fully-released and relaxed Ge1-xSnx structures on Ge substrate. The coefficients of Raman peak shift a and b due to the alloy disorder and strain, respectively, were experimentally obtained for Ge1-xSnx. In addition, to lower the Sn composition needed to achieve direct bandgap Ge1-xSnx alloys and also to realize channel materials with higher electron mobility, uniaxially tensile strained Ge1-xSnx patterns were fabricated. Large tensile strain (>1%) was detected in the patterned Ge1-xSnx lines. Such tensile-strained Ge1-xSnx structures could enable the realization of Group-IV optoelectronic devices and high mobility n-channel transistors. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：P138 / P145

页数：8

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