Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

被引：9

作者：

Chen, Y-T. ^{[1
,2
]}

Lan, H-S. ^{[1
,2
]}

Hsu, W. ^{[2
,4
]}

Fu, Y-C. ^{[3
]}

Lin, J-Y. ^{[1
,2
]}

Liu, C. W. ^{[1
,2
,3
,4
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

[4] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 02期

关键词：

GE; PMOSFETS;

D O I：

10.1063/1.3604417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Well-behaved Ge n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates with dispersion-free, high on/off ratio, and high peak mobility are demonstrated. The interface trap density is effectively reduced down to 5 x 10(11) cm(-2) eV(-1) near midgap by GeO2 passivation using rapid thermal oxidation, resulting in high peak mobility of similar to 1050 cm(2)/Vs. The fast roll-off of the mobility at high electric field is probably due to the large surface roughness scattering. By applying uniaxial < 110 > tensile strain (0.08%) on < 110 > channel direction, the best mobility enhancement (12%) can be achieved. The calculated strain responses with proper stress configurations are consistent with experimental results. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3604417]

引用

页数：3

共 20 条

[1] High FET Performance for a Future CMOS GeO2-Based Technology [J].

Bellenger, Florence ;

De Jaeger, Brice ;

Merckling, Clement ;

Houssa, Michel ;

Penaud, Julien ;

Nyns, Laura ;

Vrancken, Evi ;

Caymax, Matty ;

Meuris, Marc ;

Hoffmann, Thomas ;

De Meyer, Kristin ;

Heyns, Marc .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) :402-404

[2] Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors [J].

Bethge, O. ;

Abermann, S. ;

Henkel, C. ;

Straif, C. J. ;

Hutter, H. ;

Smoliner, J. ;

Bertagnolli, E. .

APPLIED PHYSICS LETTERS, 2010, 96 (05)

[3] Activation and diffusion studies of ion-implanted p and n dopants in germanium [J].

Chui, CO ;

Gopalakrishnan, K ;

Griffin, PB ;

Plummer, JD ;

Saraswat, KC .

APPLIED PHYSICS LETTERS, 2003, 83 (16) :3275-3277

[4] Activation of Implanted n-Type Dopants in Ge Over the Active Concentration of 1 X 1020 cm-3 Using Coimplantation of Sb and P [J].

Kim, Jeehwan ;

Bedell, Stephen W. ;

Maurer, Siegfried L. ;

Loesing, Rainer ;

Sadana, Devendra K. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (01) :II12-II15

[5]

KOBAYASHI M, 2010, S VLSI TECHN, P76

[6] Uniaxial Stress Engineering for High-Performance Ge NMOSFETs [J].

Kobayashi, Masaharu ;

Irisawa, Toshifumi ;

Magyari-Koepe, Blanka ;

Saraswat, Krishna ;

Wong, H. -S. Philip ;

Nishi, Yoshio .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (05) :1037-1046

[7] Inversion mobility and gate leakage in high-k/metal gate MOSFETs [J].

Kotlyar, R ;

Giles, MD ;

Matagne, P ;

Obradovic, B ;

Shrifen, L ;

Stettler, M ;

Wang, E .

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :391-394

[8] High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms [J].

Kuzum, Duygu ;

Krishnamohan, Tejas ;

Nainani, Aneesh ;

Sun, Yun ;

Pianetta, Piero A. ;

Wong, H-S Philip ;

Saraswat, Krishna C. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) :59-66

[9] Ge (100) and (111) N- and P-FETs With High Mobility and Low-T Mobility Characterization [J].

Kuzum, Duygu ;

Pethe, Abhijit J. ;

Krishnamohan, Tejas ;

Saraswat, Krishna C. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (04) :648-655

[10]

Lee CH, 2009, INT EL DEVICES MEET, P424

← 1 2 →