Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates

被引：9

作者：

Chen, Y-T. ^{[1
,2
]}

Lan, H-S. ^{[1
,2
]}

Hsu, W. ^{[2
,4
]}

Fu, Y-C. ^{[3
]}

Lin, J-Y. ^{[1
,2
]}

Liu, C. W. ^{[1
,2
,3
,4
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

[4] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 02期

关键词：

GE; PMOSFETS;

D O I：

10.1063/1.3604417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Well-behaved Ge n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates with dispersion-free, high on/off ratio, and high peak mobility are demonstrated. The interface trap density is effectively reduced down to 5 x 10(11) cm(-2) eV(-1) near midgap by GeO2 passivation using rapid thermal oxidation, resulting in high peak mobility of similar to 1050 cm(2)/Vs. The fast roll-off of the mobility at high electric field is probably due to the large surface roughness scattering. By applying uniaxial < 110 > tensile strain (0.08%) on < 110 > channel direction, the best mobility enhancement (12%) can be achieved. The calculated strain responses with proper stress configurations are consistent with experimental results. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3604417]

引用

页数：3

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