Electrical Characteristics of Germanium n+/p Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb

被引：32

作者：

Thareja, G. ^{[1
]}

Cheng, S. -L. ^{[2
]}

Kamins, T. ^{[1
]}

Saraswat, K. ^{[1
]}

Nishi, Y. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 05期

关键词：

Activation; antimony; contact resistance; germanium; junction; phosphorus;

D O I：

10.1109/LED.2011.2119460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly activated n-type dopant is essential for n(+)/p germanium diodes which will be in use for source/drain regions in Ge n-MOSFETs as geometry scaling proceeds. Rapid thermal annealing of coimplanted P and Sb in Ge has provided n-type dopant activation beyond 1 x 10(20) cm(-3). However, there are limited reports on the electrical characteristics of these junctions. This letter has investigated the temperature-dependent diode I-V characteristics and contact resistance of metal-n(+) Ge contacts. Well-behaved n(+)/pGe diodes (I-on/I-off > 10(5) and eta < 1.2) and significantly reduced contact resistance (rho(c) similar to 8 x 10(-7) Omega . cm(2)) have been demonstrated.

引用

页码：608 / 610

页数：3

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