Ge (100) and (111) N- and P-FETs With High Mobility and Low-T Mobility Characterization

被引：92

作者：

Kuzum, Duygu ^{[1
]}

Pethe, Abhijit J. ^{[2
]}

Krishnamohan, Tejas ^{[1
,3
]}

Saraswat, Krishna C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Ctr Integrated Syst, Stanford, CA 94305 USA

[2] Intel Corp, Hillsboro, OR 97124 USA

[3] Intel Corp, Santa Clara, CA 95054 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 04期

关键词：

Germanium; interface state density extraction; mobility; MOSFET; orientation; scattering; SURFACE-OXIDE CHARGES; INVERSION LAYER; INTERFACE; GERMANIUM; GATE; GE(100); MOSFETS; SCATTERING; ELECTRONS; DENSITY;

D O I：

10.1109/TED.2009.2014198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to date in Ge is reported, and two times improvement over universal hole mobility is achieved for Ge P-FETs. For the first time, the effect of surface orientation on Ge mobility is investigated experimentally. A 50% improvement in electron mobility is shown for the (111) substrate orientation compared to the (100) orientation. Carrier scattering mechanisms are studied through low-temperature mobility measurements and interface characterization. The conductance technique is applied at low temperatures for complete mapping of the density of interface traps (D(it)) across the Ge bandgap and also close to the band edges. Carrier scattering mechanisms and the distribution of Dit are compared for Ge NMOS and PMOS.

引用

页码：648 / 655

页数：8

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