MOSFET ELECTRON INVERSION LAYER MOBILITIES - A PHYSICALLY BASED SEMI-EMPIRICAL MODEL FOR A WIDE TEMPERATURE-RANGE

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[2] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1616 - 1626

[3] A SEMIEMPIRICAL MODEL OF THE MOSFET INVERSION LAYER MOBILITY FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 89 - 93

[4] TEMPERATURE-DEPENDENT RESISTIVITIES IN SILICON INVERSION-LAYERS AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (22) : 1472 - 1475

[5] SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 126 - 155

[6] TRANSPORT OF ELECTRONS IN QUANTIZED INVERSION AND ACCUMULATION LAYERS IN III-V COMPOUNDS [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 243 - 252

[7] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[8] Gildenblat G., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P268

[9] OPERATION OF BULK CMOS DEVICES AT VERY LOW-TEMPERATURES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (03) : 484 - 490

[10] TEMPERATURE-DEPENDENCE OF SCATTERING IN THE INVERSION LAYER [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 181 - 190

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[2] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1616 - 1626

[3] A SEMIEMPIRICAL MODEL OF THE MOSFET INVERSION LAYER MOBILITY FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) : 89 - 93

[4] TEMPERATURE-DEPENDENT RESISTIVITIES IN SILICON INVERSION-LAYERS AT LOW-TEMPERATURES [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (22) : 1472 - 1475

[5] SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 126 - 155

[6] TRANSPORT OF ELECTRONS IN QUANTIZED INVERSION AND ACCUMULATION LAYERS IN III-V COMPOUNDS [J]. THIN SOLID FILMS, 1979, 56 (1-2) : 243 - 252

[7] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 218 - 229

[8] Gildenblat G., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P268

[9] OPERATION OF BULK CMOS DEVICES AT VERY LOW-TEMPERATURES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1986, 21 (03) : 484 - 490

[10] TEMPERATURE-DEPENDENCE OF SCATTERING IN THE INVERSION LAYER [J]. SURFACE SCIENCE, 1980, 98 (1-3) : 181 - 190