Electrical characterization of germanium oxide/germanium interface prepared by electron-cyclotron-resonance plasma irradiation

被引:85
作者
Fukuda, Y
Ueno, T
Hirono, S
Hashimoto, S
机构
[1] Tokyo Univ Sci, Nagano 3910292, Japan
[2] Tokyo Univ Agr & Technol, Tokyo 1848588, Japan
[3] NTT AFTY Corp, Tokyo 1920918, Japan
[4] Texas Instruments Japan Ltd, Tsukuba, Ibaraki 3050841, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 9B期
关键词
ge; GeOx; ECR plasma oxidation; ECR sputtering; GeOx/Ge interface trap; ac conductance;
D O I
10.1143/JJAP.44.6981
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have found excellent electrical characteristics in germanium oxide grown by plasma oxidation for germanium metalinsulator-semiconductor gate dielectric applications. An oxygen plasma stream generated by electron cyclotron resonance was used to oxidize a germanium surface without substrate heating. A transmission electron microscope observation revealed that the obtained germanium oxide/germanium interface is atomically smooth. The energy distribution of interface trap density (D-it) in the upper half of the p-type germanium band gap was measured by the ac conductance method. It is shown that the Dit at the midgap is similar to 6 x 10(10) cm(-2) eV(-1) and increases exponentially as the energy increases to the conduction-band edge.
引用
收藏
页码:6981 / 6984
页数:4
相关论文
共 13 条
[1]  
Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872
[2]   Asymmetric energy distribution of interface traps in n- and p-MOSFETs with HfO2 gate dielectric on ultrathin SiON buffer layer [J].
Han, JP ;
Vogel, EM ;
Gusev, EP ;
D'Emic, C ;
Richter, CA ;
Heh, DW ;
Suehle, JS .
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (03) :126-128
[3]   High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition [J].
Höck, G ;
Kohn, E ;
Rosenblad, C ;
von Känel, H ;
Herzog, HJ ;
König, U .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :3920-3922
[4]   GATE-SELF-ALIGNED P-CHANNEL GERMANIUM MISFETS [J].
JACKSON, TN ;
RANSOM, CM ;
DEGELORMO, JF .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (11) :605-607
[5]   Using electron cyclotron resonance sputtering in the deposition of ultrathin Al2O3 gate dielectrics [J].
Jin, Y ;
Saito, K ;
Shimada, M ;
Ono, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03) :942-948
[6]   LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION METHOD UTILIZING AN ELECTRON-CYCLOTRON RESONANCE PLASMA [J].
MATSUO, S ;
KIUCHI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (04) :L210-L212
[7]  
NICOLLIAN EH, 1981, MOS PHYS TECHNOLOGY, pCH5
[8]   Strained SiNMOSFETs for high performance CMOS technology [J].
Rim, K ;
Koester, S ;
Hargrove, M ;
Chu, J ;
Mooney, PM ;
Ott, J ;
Kanarsky, T ;
Ronsheim, P ;
Ieong, M ;
Grill, A ;
Wong, HSP .
2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, :59-60
[9]   Low-temperature silicon oxidation with very small activation energy and high-quality interface by electron cyclotron resonance plasma stream irradiation [J].
Saito, K ;
Jin, Y ;
Ono, T ;
Shimada, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (6B) :L765-L767
[10]   MOS-diode characteristics with HfO2 gate insulator deposited by ECR sputtering [J].
Saito, K ;
Jin, Y ;
Shimada, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (05) :G328-G337