Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy

被引：249

作者：

Chen, Robert ^{[1
]}

Lin, Hai ^{[2
]}

Huo, Yijie ^{[1
]}

Hitzman, Charles ^{[3
]}

Kamins, Theodore I. ^{[1
]}

Harris, James S. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[3] Stanford Univ, SNC, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 18期

基金：

美国国家科学基金会;

关键词：

BUFFER LAYERS;

D O I：

10.1063/1.3658632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We synthesized up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1-yAs buffer layers using molecular beam epitaxy. The buffer layers enable engineered control of strain in the Ge1-xSnx layers to reduce strain-related defects and precipitation. Samples grown under similar conditions show a monotonic increase in the integrated photoluminescence (PL) intensity as the Sn composition is increased, indicating changes in the bandstructure favorable for optoelectronics. We account for bandgap changes from strain and composition to determine a direct bandgap bowing parameter of b-2.1 +/- 0.1. According to our models, these are the first Ge1-xSnx samples that are both direct-bandgap and exhibit PL. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658632]

引用

页数：3

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