Ge on Si p-i-n photodiodes operating at 10 Gbit/s

被引：70

作者：

Colace, L

Balbi, M

Masini, G

Assanto, G

Luan, HC

Kimerling, LC

机构：

[1] Univ Toma Tre, NooEL Nonlinear Opt & OptoElect Lab, INFM, CNISM,Dept Elect Engn, I-00146 Rome, Italy

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 10期

关键词：

D O I：

10.1063/1.2182110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on fast p-i-n photodetectors operating in the near infrared and realized in pure germanium on silicon. The diodes were fabricated by chemical vapor deposition at 600 degrees C without affecting the crystal quality and allowing the integration with standard silicon processes. We demonstrate responsivities of 0.4 and 0.2 A/W at 1.3 and 1.55 mu m, respectively, as well as operation at 10 Gbit/s. (c) 2006 American Institute of Physics.

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页数：3

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