Linear array of Si-Ge heterojunction photodetectors monolithically integrated with silicon CMOS readout electronics

被引：22

作者：

Masini, G ^{[1
]}

Cencelli, V

Colace, L

de Notaristefani, F

Assanto, G

机构：

[1] Univ Roma Tre, Natl Inst Phys Matter, Nonlinear Opt & Optoelect Lab, I-00146 Rome, Italy

[2] Natl Inst Nucl Phys, I-00146 Rome, Italy

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2004年 / 10卷 / 04期

关键词：

germanium-on-silicon; monolithic integration; near-infrared (NIR); photodetectors;

D O I：

10.1109/JSTQE.2004.833970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a complementary metaloxide-semiconductor (CMOS) integrated circuit for detection and imaging in the near infrared. Detectors are realized by thermal evaporation of Ge films at the end of the standard CMOS process on substrates held at low temperature (300 degreesC). Each of the 64 detectors is connected to a front-end stage for photocurrent integration and analog-to-digital conversion.

引用

页码：811 / 815

页数：5

共 15 条

[1] 16-pixel linear array of near-infrared photodetectors in polycrystalline Ge on Si [J].

Colace, L ;

Masini, G ;

Galluzzi, F ;

Assanto, G .

ELECTRONICS LETTERS, 1998, 34 (20) :1968-1969

[2]

Dries JC, 2002, IEEE LEOS ANN MTG, P758

[3] Estimation of forest leaf area index using vegetation indices derived from Hyperion hyperspectral data [J].

Gong, P ;

Pu, RL ;

Biging, GS ;

Larrieu, MR .

IEEE TRANSACTIONS ON GEOSCIENCE AND REMOTE SENSING, 2003, 41 (06) :1355-1362

[4] Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon [J].

Holland, SE ;

Groom, DE ;

Palaio, NP ;

Stover, RJ ;

Wei, MZ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (01) :225-238

[5] Focal-plane-arrays and CMOS readout techniques of infrared imaging systems [J].

Hsieh, CC ;

Wu, CY ;

Jih, FW ;

Sun, TP .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY, 1997, 7 (04) :594-605

[6]

JOSHI AM, 1994, P SOC PHOTO-OPT INS, V2290, P430, DOI 10.1117/12.187447

[7] 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm [J].

Masini, G ;

Colace, L ;

Assanto, G .

APPLIED PHYSICS LETTERS, 2003, 82 (15) :2524-2526

[8] Monolithic integration of near-infrared Ge photodetectors with Si complementary metal-oxide-semiconductor readout electronics [J].

Masini, G ;

Cencelli, V ;

Colace, L ;

De Notaristefani, F ;

Assanto, G .

APPLIED PHYSICS LETTERS, 2002, 80 (18) :3268-3270

[9] Near-infrared photodetectors based on polycrystalline Ge evaporated on Si⟨100⟩ substrates [J].

Masini, G ;

Colace, L ;

Galluzzi, F ;

Assanto, G .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 2000, 80 (04) :791-797

[10]

MASINI G, 2002, HDB THIN FILM MAT, V4, P331

← 1 2 →