Effect of the location of Mn sites in ferromagnetic Ga1-xMnxAs on its Curie temperature -: art. no. 201303

被引：499

作者：

Yu, KM ^{[1
]}

Walukiewicz, W

Wojtowicz, T

Kuryliszyn, I

Liu, X

Sasaki, Y

Furdyna, JK

机构：

[1] Lawrence Berkeley Lab, Div Sci Mat, Elect Mat Program, Berkeley, CA 94549 USA

[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.65.201303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a strong correlation between the location of Mn sites in ferromagnetic Ga1-xMnxAs measured by combined channeling Rutherford backscattering and by particle-induced x-ray emission experiments and its Curie temperature. The concentrations of free holes determined by electrochemical capacitance-voltage profiling and of uncompensated Mn2+ spins determined from superconducting quantum-interference device magnetization measurements are found to depend on the concentration of unstable defects involving highly mobile Mn interstitials. This leads to large variations in T-C of Ga1-xMnxAs when it is annealed at different temperatures in a narrow temperature range. The fact that annealing under various conditions has failed to produce Curie temperatures above similar to110 K is attributed to the existence of an upper limit on the free hole concentration in low-temperature-grown Ga1-xMnxAs.

引用

页码：1 / 4

页数：4

共 25 条

[1]

[Anonymous], 1995, Handbook of Modern Ion Beam Material Analysis

[2]

Berger L., 1980, Hall effect and its applications. Proceedings of the commemorative symposium, P55

[3] ANNEALING STUDIES OF LOW-TEMPERATURE-GROWN GAAS-BE [J].

BLISS, DE ;

WALUKIEWICZ, W ;

AGER, JW ;

HALLER, EE ;

CHAN, KT ;

TANIGAWA, S .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) :1699-1707

[4]

DeBoeck J, 1996, APPL PHYS LETT, V68, P2744, DOI 10.1063/1.115584

[5] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[6]

FAKTOR MM, 1980, CURRENT TOPICS MAT S, V1, P1

[7]

Feldman L.C., 1982, MAT ANAL ION CHANNEL

[8] Atomic-scale study of GaMnAs/GaAs layers [J].

Grandidier, B ;

Nys, JP ;

Delerue, C ;

Stiévenard, D ;

Higo, Y ;

Tanaka, M .

APPLIED PHYSICS LETTERS, 2000, 77 (24) :4001-4003

[9] Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As [J].

Hayashi, T ;

Hashimoto, Y ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 2001, 78 (12) :1691-1693

[10] Properties of ferromagnetic III-V semiconductors [J].

Ohno, H .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :110-129

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