Radio-frequency power transistors based on 6H- and 4H-SiC

被引：19

作者：

Moore, K ^{[1
]}

Trew, RJ ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,DEPT ELECT ENGN & APPL PHYS,CLEVELAND,OH 44106

来源：

关键词：

D O I：

10.1557/S0883769400032760

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：50 / 56

页数：7

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