Effect of substrate material on the crystallinity and epitaxy of Pb(Zr,Ti)O3 thin films

被引:49
作者
Hwang, KS
Manabe, T
Nagahama, T
Yamaguchi, I
Kumagai, T [1 ]
Mizuta, S
机构
[1] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan
[2] Tokyo Univ Sci, Dept Mat Sci & Technol, Chiba 2780022, Japan
关键词
PZT thin films; dipping-pyrolysis; epitaxy; substrates;
D O I
10.1016/S0040-6090(98)01727-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pb(Zr,Ti)O-3 thin films (Pb:Zr:Ti = 1:0.52:0.48) were prepared on various single-crystal substrates via dipping-pyrolysis process by use of metal naphthenates as starting materials. The alignments of these films were examined by X-ray diffraction (XRD) theta-2 theta scans and beta scans (pole figures). The films grown on Nb-doped SrTiO3, MgO or LaAlO3 showed an epitaxial relationship with substrates after heat treatment at 750 degrees C, while those grown on sapphire and Si wafers exhibited polycrystalline or amorphous characteristics. Epitaxial films on SrTiO3 and LaAlO3 were found to consist of a c-axis oriented tetragonal phase, to minimize the lattice misfit with the substrates. These epitaxial films exhibited very smooth surfaces by SEM and AFM observations. In addition, the fluctuation of in-plane alignment was significantly dependent on the lattice-misfit values. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:106 / 111
页数:6
相关论文
共 14 条
[1]   FERROELECTRIC (PB,LA)(ZR,TI)O3 EPITAXIAL THIN-FILMS ON SAPPHIRE GROWN BY RF-PLANAR MAGNETRON SPUTTERING [J].
ADACHI, H ;
MITSUYU, T ;
YAMAZAKI, O ;
WASA, K .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :736-741
[2]  
Alpay SP, 1997, MATER RES SOC SYMP P, V474, P407
[3]   MICROSTRUCTURE OF SOLUTION-PROCESSED LEAD ZIRCONATE TITANATE (PZT) THIN-FILMS [J].
CARIM, AH ;
TUTTLE, BA ;
DOUGHTY, DH ;
MARTINEZ, SL .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (06) :1455-1458
[4]  
DeBenedittis A, 1996, MATER RES SOC SYMP P, V433, P249
[5]   Preparation of epitaxial Pb(Zr,Ti)O-3 thin films on Nb-doped SrTiO3 (100) substrates by dipping-pyrolysis process [J].
Hwang, KS ;
Manabe, T ;
Yamaguchi, I ;
Kumagai, T ;
Mizuta, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08) :5221-5225
[6]   EPITAXIAL-GROWTH OF FERROELECTRIC PLZT [(PB,LA)(ZR,TI)O3] THIN-FILMS [J].
ISHIDA, M ;
TSUJI, S ;
KIMURA, K ;
MATSUNAMI, H ;
TANAKA, T .
JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :393-398
[7]   Nucleation- or growth-controlled orientation development in chemically derived ferroelectric lead zirconate titanate (Pb(ZrxTi1-x)O-3, x=0.4) thin films [J].
Liu, YM ;
Phule, PP .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (02) :495-498
[8]  
Mizuno M., 1974, Yogyo-Kyokai-Shi, V82, P631, DOI 10.2109/jcersj1950.82.952_631
[9]   PREPARATION AND CHARACTERIZATION OF SOL-GEL DERIVED EPITAXIAL AND ORIENTED PB(ZR0.52TI0.48)O-3 THIN-FILMS [J].
NASHIMOTO, K ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5147-5150
[10]   SOLID-PHASE EPITAXIAL-GROWTH OF SOL-GEL DERIVED PB(ZR,TI)O-3 THIN-FILMS ON SRTIO3 AND MGO [J].
NASHIMOTO, K ;
FORK, DK ;
ANDERSON, GB .
APPLIED PHYSICS LETTERS, 1995, 66 (07) :822-824