Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

被引：19

作者：

Chamings, J. ^{[1
]}

Adams, A. R. ^{[1
]}

Sweeney, S. J. ^{[1
]}

Kunert, B. ^{[2
,3
]}

Volz, K. ^{[2
,3
]}

Stolz, W. ^{[2
,3
]}

机构：

[1] Univ Surrey, Fac Engn & Phys Sci, Adv Technol Inst, Surrey GU2 7XH, England

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2975845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (lambda=890nm). Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism. (c) 2008 American Institute of Physics.

引用

页数：3

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