High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

被引：11

作者：

Adolfsson, G. ^{[1
]}

Wang, S. M.

Sadeghi, M.

Larsson, A.

机构：

[1] Chalmers Univ Technol, Dept Microelect & Nanosci, Phot Lab, SE-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Dept Microelect & Nanosci, Nanofabricat Lab, SE-41296 Gothenburg, Sweden

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 08期

关键词：

D O I：

10.1049/el:20070279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality 1.2 mu m InGaAs/GaAs single and triple quantum-well lasers grown by molecular beam epitaxy are demonstrated. For the triple quantum well, a record low threshold current density of 107 A/cm(2) /well is achieved for a 100 x 1000 mu m laser.

引用

页码：454 / 456

页数：3

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