Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers

被引：43

作者：

Sung, LW ^{[1
]}

Lin, HH

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 06期

关键词：

D O I：

10.1063/1.1600504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly strained InGaAs/GaAs quantum wells grown at very low temperature (380 degreesC) have been studied. The critical thickness of the In0.38Ga0.62As quantum well is 8.8 nm and the photoluminescence peak is at 1.24 mum. An edge-emitting In0.388Ga0.612As/GaAs quantum-well laser demonstrates an emission wavelength of 1.244 mum at 18 degreesC. The threshold current density is 405 A/cm(2) for an as-cleaved diode laser with 873-mum cavity length. The internal quantum efficiency and laser cavity loss are 93% and 6.4 cm(-1), respectively. (C) 2003 American Institute of Physics.

引用

页码：1107 / 1109

页数：3

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