Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

被引：8

作者：

Jiang, DS ^{[1
]}

Qu, YH ^{[1
]}

Ni, HQ ^{[1
]}

Wu, DH ^{[1
]}

Xu, YQ ^{[1
]}

Niu, ZC ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 288卷 / 01期

关键词：

molecular beam epitaxy; quantum wells; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2005.12.016

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It is found that both methods using either continuous Sb supply or pre-deposition of a very thin Sb layer are efficient for the Sb-assisted molecular beam epitaxy growth of highly strained InGaAs/GaAs quantum wells (QWs). The emission of QWs is extended to long wavelength close to 1.25 mu m with high luminescence efficiency at room temperature. The influence of rapid thermal annealing (RTA) on the photoluminescence intensity critically depends on the annealing temperature and duration for highly strained QWs. A relatively low RTA temperature of 700 degrees C with a short duration of 10 s is suggested for optimizing the annealing effect. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：12 / 17

页数：6

共 14 条

[1] Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells [J].