Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells

被引：12

作者：

Bian, LF ^{[1
]}

Jiang, DS ^{[1
]}

Lu, SL ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 253卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

interdiffusion; post-annealing; quantum wells; GaInNAs/GaAs;

D O I：

10.1016/S0022-0248(03)01079-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thermal annealing of GaInAs/GaNAs quantum wells (QWs) as well as other nitrogen- and indium-contained QW structures grown by molecular beam epitaxy and its effect on optical properties are investigated. The photoluminescence (PL) and photovoltaic (PV) spectra of annealed GaInAs/GaNAs QWs show that the luminescence properties become degraded due to the N diffusion from the GaNAs barrier layers to the GaInAs well layer. Meantime, the annealing-induced blueshift of the PL peak in this QW system is mainly induced by the change of In distribution, suggesting that the In reorganization is greatly assisted by the N-induced defects. The elucidation of annealing effect in GaInAs/GaNAs QW samples is helpful for a better understanding to the annealing effect in the GaInNAs/GaAs QWs. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：155 / 160

页数：6

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