Effect of annealing on the In and N distribution in InGaAsN quantum wells

被引：85

作者：

Albrecht, M

Grillo, V

Remmele, T

Strunk, HP

Egorov, AY

Dumitras, G

Riechert, H

Kaschner, A

Heitz, R

Hoffmann, A

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci & Engn, Inst Microcharacterisat, D-91058 Erlangen, Germany

[2] Infineon Technol, Corp Res Photon, D-81730 Munich, Germany

[3] Tech Univ Berlin, Inst Solid State Phys, D-10632 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 15期

关键词：

D O I：

10.1063/1.1509122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze the influence of annealing on compositional fluctuations in InGaAsN quantum wells by means of composition-sensitive high-resolution transmission electron microscopy and photoluminescence. In as-grown samples, we find In-concentration fluctuations of +/-5% on a length scale of 20 nm in a two-dimensional grown quantum well. No indications for N concentration fluctuations are found within the limits of resolution. Annealing homogenizes the In distribution within the well and causes diffusion of N out of the quantum well. According to our compositional analysis, the blueshift in the photoluminescence can in part be attributed to reduction in N concentration inside the well. The more homogeneous In distribution leads to a reduction in linewidth and Stokes shift. (C) 2002 American Institute of Physics.

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页码：2719 / 2721

页数：3

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