Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy

被引：24

作者：

McKay, HA

Feenstra, RM ^{[1
]}

Schmidtling, T

Pohl, UW

Geisz, JF

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Tech Univ Berlin, D-10623 Berlin, Germany

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.1379967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitrogen atoms in the cleaved (110) surfaces of dilute GaAsN and InGaAsN alloys have been studied using cross-sectional scanning tunneling microscopy. The distribution of nitrogen atoms in GaAs0.983N0.017 and In0.04Ga0.96As0.09N0.01 alloys is found to be in agreement with random statistics, with the exception of a small enhancement in the number of [001]-oriented nearest-neighbor pairs. The effects of annealing on In0.04Ga0.96As0.99N0.01 alloys has been studied by scanning tunneling spectroscopy. Spectra display a reduced band gap compared to GaAs but little difference is seen between as-grown versus annealed InGaAsN samples. In addition, voltage dependent imaging has been used to investigate second-plane nitrogen atoms. (C) 2001 American Vacuum Society.

引用

页码：1644 / 1649

页数：6

共 18 条

[1] Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures [J].