1.34μm GaInNAs quantum well lasers with low room-temperature threshold current density

被引：15

作者：

Hopkinson, M. ^{[1
]}

Jin, C. Y. ^{[1
]}

Liu, H. Y. ^{[1
]}

Airey, R. ^{[1
]}

机构：

[1] Univ Sheffield, EPRSC, Natl Ctr Technol 8, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 16期

关键词：

D O I：

10.1049/el:20061325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quaternary GaInNAs barrier layer was used to improve the performance of 1.3 mu m GaInNAs single quantum well lasers grown by MBE. A record low threshold current density of 178 A/cm(2) and a record low transparent current density of 63 A/cm(2) were achieved by a ridge waveguide laser with emission at 1336 nm.

引用

页码：923 / 924

页数：2

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