Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

被引：96

作者：

Li, W ^{[1
]}

Jouhti, T ^{[1
]}

Peng, CS ^{[1
]}

Konttinen, J ^{[1
]}

Laukkanen, P ^{[1
]}

Pavelescu, EM ^{[1
]}

Dumitrescu, M ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 21期

关键词：

D O I：

10.1063/1.1418455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using solid-source molecular-beam epitaxy with a rf-plasma source, we have grown GaInNAs/GaAs single-quantum-well lasers operating at 1.32 mum. For a broad-area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 mum, the threshold current density is 546 A/cm(2) at room temperature. The internal quantum efficiency for these lasers is 80%, while the materials losses are 7.0 cm(-1). A characteristic temperature of 104 K was measured in the temperature range from 20 to 80 degreesC. Optical output up to 40 mW per facet under continuous-wave operation was achieved for these uncoated lasers at room temperature. (C) 2001 American Institute of Physics.

引用

页码：3386 / 3388

页数：3

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